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| 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 60 6.0 600 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200 Max *MMBT4401 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4401/MMBT4401, Rev A 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 0.1 mA, IE = 0 IE = 0.1 mA, IC = 0 VCE = 35 V, VEB = 0.4 V VCE = 35 V, VEB = 0.4 V 40 60 6.0 0.1 0.1 V V V A A ON CHARACTERISTICS* hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 20 40 80 100 40 300 0.4 0.75 0.95 1.2 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.75 SMALL SIGNAL CHARACTERISTICS fT Ccb Ceb hie hre hfe hoe Current Gain - Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 250 6.5 30 1.0 0.1 40 1.0 15 8.0 500 30 mhos MHz pF pF k x 10 -4 3 SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, VEB = 2 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = IB2 = 15 mA 15 20 225 30 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics 500 V CE = 5V V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 400 300 200 25 C 125 C 0.2 25 C 125 C 100 - 40 C 0.1 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 - 40 C Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 25 C 125 C 0.6 125 C 0.6 0.4 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 500 100 10 1 0.1 V CB Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C te = 40V f = 1 MHz 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Ic 10 Switching Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Ic 10 320 V cc = 25 V TIME (nS) 240 160 t off TIME (nS) 240 160 80 0 10 tf td ts tr 80 t on 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0kHz) CHAR. RELATIVE TO VALUES AT I C= 10mA CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 8 V CE = 10 V T A = 25oC Common Emitter Characteristics 2.4 2 1.6 1.2 0.8 0.4 0 V CE = 10 V I C = 10 mA h re h ie h fe hoe 6 hoe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 CHAR. RELATIVE TO VALUES AT VCE = 10V Common Emitter Characteristics 1.3 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0 5 hoe 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 h re h ie I C = 10 mA T A = 25oC h fe 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Test Circuits 30 V 200 16 V 1.0 K 0 200ns 500 FIGURE 1: Saturated Turn-On Switching Timer - 1.5 V 6.0 V NOTE: BV EBO = 5.0 V 1k 37 30 V 1.0 K 0 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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